Low Voltage GaN-Based Gate Driver to Increase Switching Speed of Paralleled 650 V E-mode GaN HEMTs

被引：2

作者：

Risch, Raffael ^{[1
]}

Biela, Juergen ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Lab High Power Elect Syst, Zurich, Switzerland

来源：

2020 22ND EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'20 ECCE EUROPE) | 2020年

关键词：

Gallium Nitride (GaN); Parallel operation; Pulsed power; Design; Wide bandgap devices;

D O I：

10.23919/epe20ecceeurope43536.2020.9215773

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Using GaN HEMTs in high current applications, such as pulsed power modulators for particle accelerator systems, requires the parallelization of multiple devices, In order to achieve a dynamically balanced current distribution between the parallel devices, synchronized gate voltages are crucial. Furthermore, the high switching speeds, which are often required in pulsed power systems, requires a high driving current capability and fast rise/fall times of the gate driver. Therefore, this paper presents a gate driver, based on a low voltage GaN HEMT half bridge, for driving four paralleled 650V e-mode GaN HEMTs in a low inductive switching cell design.

引用

页数：11

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