High impact ionization rate in silicon by sub-picosecond THz electric field pulses

被引：0
|
作者：
Tarekegne, Abebe T. [1 ]
Iwaszczuk, Krzysztof [1 ]
Hirori, Hideki [2 ]
Tanaka, Koichiro [3 ]
Jepsen, Peter U. [1 ]
机构：
[1] DTU Foton, Lyngby, Denmark
[2] Kyoto Univ, Kyoto, Japan
[3] Inst Integrated Cell Mat Sci, Kyoto, Japan
来源：
ULTRAFAST PHENOMENA AND NANOPHOTONICS XXI | 2017年 / 10102卷
关键词：
D O I：
10.1117/12.2252058
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页数：1
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