Transparent Back Contacts for Superstrate (AG,CU)(IN,GA)SE2 Thin Film Solar Cells

被引：3
|
作者：
Simchi, H. [1 ,2 ]
Larsen, J. K. [1 ,3 ]
Shafarman, W. N. [1 ,2 ]
机构：
[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA
[2] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA
[3] Uppsala Univ, S-75105 Uppsala, Sweden
来源：
IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 01期
关键词：
Back contact; oxide; solar cell; XPS; SURFACE-PROPERTIES;
D O I：
10.1109/JPHOTOV.2014.2365469
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Molybdenum oxide (MoO3) and tungsten oxide (WO3) are considered as transparent back contacts for (Ag,Cu)(In,Ga)Se-2 thin film solar cells. MoO3 and WO3 films were deposited by reactive RF sputtering at room temperature in an Ar/O-2 ambient on (Ag,Cu)(In,Ga) Se-2 absorber layers with various Ga/(Ga + In) and Ag/(Ag + Cu) ratios. Determination of the valence band offsets by XPS showed that Ag-alloying of absorber layer changes the energy band alignment at the absorber-back contact interface with MoO3 and WO3 contacts. This produces a primary contact with lower valence band offset compared with Cu(In,Ga) Se-2 counterparts. The effect is less significant in films with Ga > 0.5 and Ag > 0.5 (corresponding to E-g > 1.4 eV) probably due to the different nature of ordered vacancy compounds forming near the surface phases.
引用
收藏
页码：406 / 409
页数：4
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