Sm doping effects on electrical properties of sol-gel derived SrBi2Ta2O9 films

被引：0
|
作者：
Tokumitsu, E [1 ]
Kishi, M [1 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Ctr IT21, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
FERROELECTRIC THIN FILMS XI | 2003年 / 748卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have characterized (Sr,Sm)Bi2Ta2O9 (SSBT) films fabricated by the sol-gel technique on Pt/Ti/SiO2/Si substraces. For ferroelectric-gate FET applications, a ferroelectric film which has a small remanent polarization and a relatively large coercive field is required. It is demonstrated that Sm doping in ferroelectric SBT films is effective to reduce the remanent polarization and enhance the coercive field. Sr0.5Sm0.2Bi2.2Ta2O9 films (150nm) crytallized at 850degreesC exhibits good electrical properties with a remanent polarization of 1.7 muC/cm(2) and a coercive fields of 85 kV/cm. These values are suitable for ferroelectric-gate FET applications.
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页码：275 / 280
页数：6
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