PbFe12O19 thin films prepared by pulsed laser deposition on Si/SiO2 substrates

被引：12
|
作者：
Díaz-Castañón, S
Leccabue, F
Watts, BE
Yapp, R
机构：
[1] CNR, Inst Maspec, I-43010 Parma, Italy
[2] Univ La Habana, IMRE, Fac Fis, La Habana, Cuba
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2000年 / 220卷 / 01期
关键词：
hexaferrites; thin films; pulsed laser ablation deposition;
D O I：
10.1016/S0304-8853(00)00473-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pulsed laser ablation deposition has been used to grow polycrystalline PbFe12O19 thin films with high coercivity on Si/SiO2 substrates. The influence of the substrate temperature (550-775 degrees C) and the oxygen pressure (1.0-3.0 mbar) on the magnetic properties during the deposition is reported. The crystallisation of PbFe12O19 thin films occurs in the temperature range of 600-750 degrees C, which is somewhat lower than that for the Sr and Ba hexaferrites, which crystallise in the range of 750-850 degrees C. hi-type lead hexaferrite films with high saturation magnetisation (280 emu/cm(3)) and high coercive field (3.8 kOe) were grown using a substrate temperature of 700 degrees C and a pressure of 3.0 mbar of oxygen. These films were observed to be isotropic, with an M-r/M-s ratio of similar to 0.5. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：79 / 84
页数：6
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