Phase change behaviors of Sn-doped Ge-Sb-Te material

被引：58
|
作者：
Song, W. D. [1 ]
Shi, L. P. [1 ]
Miao, X. S. [1 ]
Chong, T. C. [1 ]
机构：
[1] Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 09期
关键词：
D O I：
10.1063/1.2475390
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Sn-doped Ge-Sb-Te material was prepared by laser synthesis. It has a rocksalt crystal structure for Sn doping content less than 30 at. %. A phase change temperature tester was developed to in situ measure crystallization temperature and melting point of Sn-doped Ge-Sb-Te. The crystalliza-tion temperature of Sn-doped Ge-Sb-Te is close to that of Ge2Sb2Te5 while its melting point is much lower than that of Ge2Sb2Te5. The melting points of Sn9.8Ge20.3Sb28.4Te41.5 and Sn18.8Ge19.5Sb25.3Te36.4 are 475 and 450 degrees C, respectively. The crystallization speed was tested by an ultraviolet light at pulse duration of 30 ns. It exhibits a high crystallization speed.(c) 2007 American Institute of Physics.
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