High-pressure studies of the recombination processes, threshold currents, and lasing wavelengths in InAs/GaInAs quantum dot lasers

被引:4
|
作者
Marko, IP [1 ]
Andreev, AD
Adams, AR
Krebs, R
Reithmaier, JP
Forchel, A
机构
[1] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England
[2] Natl Acad Sci Byelarus, Inst Phys, Minsk 220072, BELARUS
[3] Univ Wurzburg, D-97074 Wurzburg, Germany
来源
关键词
D O I
10.1002/pssb.200301619
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The threshold current of broad area GRINSCH InAs quantum dot (QD) lasers has been measured as a function of hydrostatic pressure in the range of 0-12 kbar. The laser emission photon energy, E-laser, increases linearly with pressure, p, at 10.1 meV/kbar and 8.3 meV/kbar for 980 run and 1.3 mum QD lasers, respectively. For the 980 nm QD lasers the threshold current increases with pressure at a rate proportional to the square of the photon energy, E-laser(2). However, the threshold current of the 1.3 mum QD laser decreases by 26% over a 12 kbar pressure range, demonstrating the importance of the Auger recombination in 1.3 mum QD lasers. The results are discussed in the framework of a theoretical model based on the electronic structure and radiative recombination calculations carried out using an 8 x 8 k (.) p Hamiltonian.
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页码:407 / 411
页数:5
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