Stimulated optical transitions in Er-doped silicon nanostructures

被引：0
|
作者：
Kamenev, BV [1 ]
Emel'yanov, VI [1 ]
Timoshenko, VY [1 ]
Kashkarov, PK [1 ]
机构：
[1] New Jersey Inst Technol, Dept Elect & Comp Engn, Newark, NJ 07102 USA
来源：
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES | 2003年 / 737卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoluminescence (PL) of Er3+ ions in nanocrystalline (amorphous) silicon matrix has been investigated under a high level of optical excitation. A superlinear increase of the PL intensity, a shortening of the PL decay time, and strong angular dependence were found at the excitation intensity above 200 kW/cm(2). These effects are observed only in samples with presence of silicon nanocrystalls and explained by stimulated optical transitions.
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页码：755 / 760
页数：6
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