High-power high-efficiency quasi-CW Sb-based mid-IR lasers using 1.9-μm laser diode pumping

被引：23

作者：

Le, HQ ^{[1
]}

Turner, GW ^{[1
]}

Ochoa, JR ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02173 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 05期

关键词：

diode pumping; laser efficiency; mid-infrared lasers; narrow-gap semiconductors; optical pumping; semiconductor lasers;

D O I：

10.1109/68.669237

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Power efficiency is a critical issue for mid-infrared (mid-IR) semiconductor lasers. Previously, the highest power and efficiency 4-mu m laser was pumped with 0.98-mu m laser diode. This letter used 1.9-mu m diode pumping for better quantum defect ratio and heat flow geometry. A 3.7-mu m InAsSb-AlAsSb laser yielded a pump-power-limited 1,25-W single-ended output in 1-ms-long pulse with 6.5% net optical-to-optical efficiency, in contrast with a 0.67-W thermally limited output and 2.7% efficiency with 0.98-mu m diode pumping, at 70 K. The results are believed to represent the highest quasi-continuous-wave power from a single device, highest efficiency, and, scaled to the emitting aperture, highest power density for any 3-4-mu m semiconductor laser for 1-ms pulse and greater than or equal to 70 K.

引用

页码：663 / 665

页数：3

共 50 条

[31] High-efficiency and high-power single-frequency fiber laser at 1.6 μm based on cascaded energy-transfer pumping
XIANCHAO GUAN
QILAI ZHAO
WEI LIN
TIANYI TAN
CHANGSHENG YANG
PENGFEI MA
ZHONGMIN YANG
SHANHUI XU
Photonics Research, 2020, 8 (03) : 414 - 420
[32] High-power high-efficiency tilted waved laser based on the quasi periodicity photonic crystal structure
Chen, Zhonghao
Qi, Aiyi
Zhao, Shaoyu
Qu, Hongwei
Zhou, Xuyan
Xing, Xiaoxu
Wang, Xueyou
Zheng, Wanhua
SEMICONDUCTOR LASERS AND APPLICATIONS VIII, 2018, 10812
[33] INVESTIGATION OF GENERATION PARAMETERS OF RESONATORS BASED ON HIGH-EFFICIENCY DIFFRACTION COUPLER IN HIGH-POWER CW CO2-LASERS
ALEKSEEV, SV
NOVODVORSKY, OA
SAGDEEV, RY
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1994, 58 (02): : 46 - 51
[34] High-power mid-IR (4–5 μm) femtosecond laser system with a broadband amplifier based on Fe2+:ZnSe
Bravy B.G.
Gordienko V.M.
Kozlovsky V.I.
Korostelin Y.V.
Potemkin F.V.
Podmar’kov Y.P.
Podshivalov A.A.
Platonenko V.T.
Firsov V.V.
Frolov M.P.
Potemkin, F.V. (potemkin@physics.msu.ru), 1600, Allerton Press Incorporation (80): : 444 - 449
[35] High-power high-efficiency acousto-optically Q-switched rod Nd:YAG laser with 885 nm diode laser pumping
Liu, K.
Li, F. Q.
Xu, H. Y.
Wang, Z. C.
Zong, N.
Du, S. F.
Bo, Y.
Peng, Q. J.
Cui, D. F.
Xu, Z. Y.
OPTICS COMMUNICATIONS, 2013, 286 : 291 - 294
[36] Low-loss high-efficiency and high-power diode-pumped mid-infrared GaInSb/InAs quantum well lasers
Le, HQ
Lin, CH
Pei, SS
APPLIED PHYSICS LETTERS, 1998, 72 (26) : 3434 - 3436
[37] High-power mid-IR supercontinuum generation in fluoroindate and arsenic sulfide fibers pumped by a broadband 1.9-2.7 μm all-fiber laser source
Swiderski, Jacek
Grzes, Pawel
OPTICS AND LASER TECHNOLOGY, 2021, 141
[38] High-power narrow-linewidth quasi-CW diode-pumped TEM00 1064 nm Nd:YAG ring laser
Liu, Yuan
Wang, Bao-shan
Xie, Shi-yong
Bo, Yong
Wang, Peng-yuan
Zuo, Jun-wei
Xu, Yi-ting
Xu, Jia-lin
Peng, Qin-jun
Cui, Da-fu
Xu, Zu-yan
APPLIED OPTICS, 2012, 51 (10) : C27 - C31
[39] Heating Dynamics of the Active Region of High-Power Semiconductor Lasers (λ=1060 nm) with an Ultra-Wide Aperture (800 μm) in the Quasi-CW Mode
Shashkin, I. S.
Rybkin, A. D.
Kryuchkov, V. A.
Kazakova, A. E.
Romanovich, D. N.
Rudova, N. A.
Slipchenko, S. O.
Pikhtin, N. A.
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2023, 50 (SUPPL 1) : S18 - S24
[40] Heating Dynamics of the Active Region of High-Power Semiconductor Lasers (λ = 1060 nm) with an Ultra-Wide Aperture (800 µm) in the Quasi-CW Mode
I. S. Shashkin
A. D. Rybkin
V. A. Kryuchkov
A. E. Kazakova
D. N. Romanovich
N. A. Rudova
S. O. Slipchenko
N. A. Pikhtin
Bulletin of the Lebedev Physics Institute, 2023, 50 : S18 - S24

← 1 2 3 4 5 →