Highly efficient doping of carbon nanotube films with chloroauric acid by dip-coating

Single-walled carbon nanotube (SWCNT) based transparent and conductive films (TCFs) are one of the most prospective materials for novel flexible and stretchable electronic devices. Development of reproducible and scalable doping procedure is the key step towards the widespread implementation of SWCNT TCFs. Here, we thoroughly investigate a dip-coating technique for SWCNT doping as a promising approach for the practical manufacturing of SWCNT films with high performance. We examine the effect of dip-coating parameters on optical and electrical properties of the films using HAuCl4 solution in isopropyl alcohol (IPA) and in situ investigate doping effects. This method appeared to easily fine-tune the optoelectronic parameters of SWCNT films and achieve a record sheet resistance value of 36 Ohm/sq. at the 90% transmittance in the middle of visible spectral range by increasing a work function value from 4.8 (for pristine SWCNTs) to 6.0 eV. The proposed approach allows efficient, uniform, and reproducible fabrication of highly conductive and transparent SWCNT films and opens an avenue for precise tailoring of SWCNT Fermi level for optoelectronic devices.