Growth and analysis of red, green and blue luminescent oxide thin films

被引:2
|
作者
Hirata, GA [1 ]
Mckittrick, J
Devlin, D
机构
[1] Univ Nacl Autonoma Mexico, Ctr Ciencia Mat Condensada, Ensenada 22860, Baja California, Mexico
[2] Univ Calif San Diego, Ames Dept, La Jolla, CA 92093 USA
[3] Univ Calif San Diego, Mat Sci Program, La Jolla, CA 92093 USA
[4] Los Alamos Natl Lab, MST Div, Los Alamos, NM 87545 USA
关键词
D O I
10.1142/S0218625X98000761
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The growth and characterization of europium (Eu(3+)) and terbium (Tb(3+)) doped yttrium aluminum garnet (Y(3)Al(5)O(12) or YAG) and undoped ZnGa(2)O(4) photoluminescent thin films deposited on sapphire substrates at 400 degrees C by excimer pulsed laser ablation is reported. Smooth, continuous 500-nm-thick amorphous films were produced with compositions depleted in oxygen. Luminescence measurements on the as-deposited and on annealed samples revealed that heat treatments at temperatures > 800 degrees C were necessary to induce crystallization and reoxygenate, which coincided with the onset of luminescence. Annealing produced randomly oriented grains on the order of 15-200 nm.
引用
收藏
页码:413 / 417
页数:5
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