Ultraviolet photodetector based on heterojunction of n-ZnO microwire/p-GaN film

被引：35

作者：

Ding, Meng ^{[1
]}

Zhao, Dongxu ^{[2
]}

Yao, Bin ^{[3
]}

Li, Zhipeng ^{[4
]}

Xu, Xijin ^{[1
]}

机构：

[1] Univ Jinan, Sch Phys & Technol, Jinan 250022, Peoples R China

[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Lab Excited State Proc, Changchun 130021, Peoples R China

[3] Jilin Univ, Dept Phys, Changchun 130023, Peoples R China

[4] Western Digital Co, Mat Characterizat Grp, Fremont, CA 94539 USA

来源：

RSC ADVANCES | 2015年 / 5卷 / 02期

基金：

中国国家自然科学基金;

关键词：

PHOTOLUMINESCENCE;

D O I：

10.1039/c4ra11163j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High quality ZnO microwires have been fabricated by chemical vapor deposition method. Ultraviolet photodetector based on heterojunction of n-ZnO (individual microwire)/p-GaN film was fabricated. The current-voltage characteristic of the photodetector was investigated, which showed that the heterojunction had rectifying behavior with rectification ratio (I-forward/I-reverse) of about 6.3 x 10(2) at 4 V. The photoresponse spectrum displayed a sharp cut-off at the wavelength of 380 nm, and the photoresponsivity was as high as 0.45 A W-1 at 0 V and 1.3 A W-1 at 2.5 V reverse bias. The ultraviolet-visible rejection ratio (R370 nm/R450 nm) is three orders of magnitude under zero bias.

引用

页码：908 / 912

页数：5

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