Excitation-induced dephasing in semiconductor quantum dots

被引：48
|
作者：
Schneider, HC
Chow, WW
Koch, SW
机构：
[1] Kaiserslautern Univ Technol, Dept Phys, D-67653 Kaiserslautern, Germany
[2] Sandia Natl Labs, Semicond Mat & Device Sci Dept, Albuquerque, NM 87185 USA
[3] Univ Marburg, Dept Phys, D-35037 Marburg, Germany
来源：
PHYSICAL REVIEW B | 2004年 / 70卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.70.235308
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A quantum kinetic theory is used to compute excitation induced dephasing in semiconductor quantum dots due to the Coulomb interaction with a continuum of states, such as a quantum well or a wetting layer. It is shown that a frequency dependent broadening together with nonlinear resonance shifts are needed for a microscopic explanation of the excitation induced dephasing in such a system, and that excitation induced dephasing for a quantum-dot excitonic resonance is different from quantum-well and bulk excitons.
引用
收藏
页码：1 / 4
页数：4
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