Enhancements of photoluminescence intensity in high-quality floating-zone Si by thermal annealing in vacuum

被引：0

作者：

Kataoka, Keita ^{[1
]}

Hattori, Ken ^{[2
]}

Yamamoto, Aishi ^{[3
]}

Hattori, Azusa Nakamoto ^{[4
]}

Hatayama, Tomoaki ^{[2
]}

Kimoto, Yasuji ^{[1
]}

Endo, Katsuyoshi ^{[5
]}

Fuyuki, Takashi ^{[2
]}

Daimon, Hiroshi ^{[2
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

[2] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

[3] Hiroshima Inst Technol, Fac Engn, Hiroshima 7315193, Japan

[4] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[5] Osaka Univ, Grad Sch Engn, 2-2 Yamadaoka, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 11期

关键词：

HYDROGEN; SILICON; LUMINESCENCE; EFFUSION; LIFETIME;

D O I：

10.7567/JJAP.55.110308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Inactivation of non-radiative defects by hydrogen and their thermal stabilities in a high-quality floating-zone Si wafer depending on annealing conditions have been studied using in-situ photoluminescence (PL) and thermal desorption under an ultra-high vacuum. The PL intensity increased to similar to 400% of its initial value after annealing at 450 degrees C and decreased to similar to 6% of its initial value after annealing at 600 degrees C due to inactivation and activation of non-radiative defects, respectively. Based on the annealing temperature-and duration-dependence of the PL intensity, we propose two types of hydrogenated defects with different thermal stabilities. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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