Quantized Exciton Motion and Fine Energy-Level Structure of a Single Perovskite Nanowire

被引:5
|
作者
Tang, Ying [1 ,2 ]
Yin, Chunyang [1 ,2 ]
Jing, Qiang [3 ]
Zhang, Chunfeng [1 ,2 ]
Yu, Zhi-Gang [4 ,5 ]
Lu, Zhenda [3 ]
Xiao, Min [1 ,2 ,6 ]
Wang, Xiaoyong [1 ,2 ]
机构
[1] Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Coll Engn & Appl Sci, Nanjing 210093, Peoples R China
[4] Sivananthan Labs, Bolingbrook, IL 60440 USA
[5] Washington State Univ, Dept Phys & Astron, Pullman, WA 99164 USA
[6] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
基金
中国国家自然科学基金;
关键词
  perovskite; CsPbBr; 3; nanowire; quantized exciton motion; fi ne energy-level structure; NANOCRYSTALS; PHOTOLUMINESCENCE; CSPBX3; BRIGHT; BR; CL; FLUORESCENCE; EMISSION; BLINKING;
D O I
10.1021/acs.nanolett.2c00079
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The quantum-confinement effect profoundly influences the exciton energy-level structures and recombination dynamics of semiconductor nanostructures but remains largely unexplored in traditional one-dimensional nanowires mainly due to their poor optical qualities. Here, we show that in defect-tolerant perovskite material of highly luminescent CsPbBr3 nanowires, the exciton's center-of-mass motion perpendicular to the axial direction is severely confined. This is reflected in the two sets of photoluminescence spectra emitted from a single CsPbBr3 nanowire, each of which consists of doublet peaks with linear polarizations perpendicular and parallel to the axial direction. Moreover, different exciton states can be mixed by the Rashba spin-orbit coupling effect, resulting in two single photoluminescence peaks with linear polarizations both along the nanowire axis. The above findings mark the emergence of an ideal platform for the exploration of intrinsic one-dimensional exciton photophysics and optoelectronics, thus bridging the long-missing research gap between the well-studied two- and zero-dimensional semiconductor nanostructures.
引用
收藏
页码:2907 / 2914
页数:8
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