Stress Analysis of Dynamic Silicon Diaphragm under Low Pressure

被引：5

作者：

Samridhi ^{[1
]}

Kumar, Manish ^{[2
]}

Singh, Kulwant ^{[3
]}

Alvi, P. A. ^{[1
]}

机构：

[1] Banasthali Vidyapith, Dept Phys, Banasthali 304022, Rajasthan, India

[2] Indian Inst Technol Hyderabad, Dept Elect Engn, Hyderabad 502285, Telangana, India

[3] Manipal Univ Jaipur, Dept Elect & Commun Engn, Jaipur 303007, Rajasthan, India

来源：

DAE SOLID STATE PHYSICS SYMPOSIUM 2018 | 2019年 / 2115卷

关键词：

FABRICATION;

D O I：

10.1063/1.5113303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper reports stress analysis of dynamic Si diaphragm under low pressure (similar to 21 kPa). In this paper, finite element method (FEM) has been adopted within the frame work of COMSOL package in order to simulate displacement and stress profiles of silicon diaphragm at various frequencies. The simulated results show that for the 50 mu m Si diaphragm, the fundamental frequency similar to 280 kHz is suitable and yields maximum and observable displacement and stresses and hence this frequency can be considered very much suitable for piezoresistive pressure sensor.

引用

页数：4

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