Stress Analysis of Dynamic Silicon Diaphragm under Low Pressure

This paper reports stress analysis of dynamic Si diaphragm under low pressure (similar to 21 kPa). In this paper, finite element method (FEM) has been adopted within the frame work of COMSOL package in order to simulate displacement and stress profiles of silicon diaphragm at various frequencies. The simulated results show that for the 50 mu m Si diaphragm, the fundamental frequency similar to 280 kHz is suitable and yields maximum and observable displacement and stresses and hence this frequency can be considered very much suitable for piezoresistive pressure sensor.