Cooling process optimization to control Te inclusions for improving CdZnTe detector performance

被引：11
|
作者：
Liang, Xiao-yan [1 ]
Min, Jia-hua [1 ]
Yang, Sheng [1 ]
Zhang, Ji-jun [1 ]
Wang, Lin-jun [1 ]
Zhao, Yue [1 ]
Shi, Wei-min [1 ]
机构：
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2015年 / 30卷
基金：
中国国家自然科学基金;
关键词：
CdZnTe detector; Cooling rate; Te Inclusions; Energy spectra; TRAVELING HEATER METHOD; SINGLE-CRYSTALS; CDTE; DEFECTS;
D O I：
10.1016/j.mssp.2014.09.032
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Investigation of Te inclusion distribution in CdZnTe crystal treated by the cooling process at different rates indicated that cool slowly at 10-20 K/h caused the emergence of lower concentration but larger size Te inclusions, with a high level total volume fraction, decreasing the IR transmittance. When cooled fast, the dimension of Te inclusions reduced and the concentration increased, even the faster cooling rate, the higher the concentration; moreover the IR transmittance improved. The measurement of energy spectrum demonstrated that Te inclusions of large size or high concentration induced by slow or too fast cooling rate respectively degenerate spectroscopy performance. Cooling at 40-50 K/h presented an optimized process, which retained a certain amount but small size Te inclusions and kept a low total volume fraction, expressing better energy resolution. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：14 / 17
页数：4
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