White organic light-emitting devices with selectively-doped emitting layer

被引：0
|
作者：
Hsiao, Chih-Hung [1 ]
Lin, Chi-Feng
Lee, Jiun-Haw
机构：
[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, 1,Sec 4,Roosevelt Rd, Taipei, Taiwan
来源：
2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2006年
关键词：
D O I：
10.1109/LEOS.2006.278741
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We designed the white organic light-emitting devices based on the selective doping technique. With a proper device design, our WOLED reaches 6.34cd/A and 3.641m/W at 6V with the luminance of 445cd/m(2).
引用
收藏
页码：506 / +
页数：2
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