Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

被引：5
|
作者：
Wang, Y. Z. [1 ]
Xu, J.
机构：
[1] S China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou 510006, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2007年 / 88卷 / 04期
关键词：
D O I：
10.1007/s00339-007-4045-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire (alpha-Al2O3) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 degrees C for 1 h in air.
引用
收藏
页码：727 / 729
页数：3
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