Schottky ultraviolet photodiode using a ZnO hydrothermally grown single crystal substrate

被引：106

作者：

Endo, Haruyuki ^{[1
]}

Sugibuchi, Mayo

Takahashi, Kousuke

Goto, Shunsuke

Sugimura, Shigeaki

Hane, Kazuhiro

Kashiwaba, Yasube

机构：

[1] Iwate Ind Res Inst, Morioka, Iwate 0200852, Japan

[2] Iwate Informat Syst Corp, Morioka, Iwate 0200045, Japan

[3] Lightom Inc, Morioka, Iwate 0200173, Japan

[4] Tokyo Denpa Co Ltd, Tokyo 1430024, Japan

[5] Tohoku Univ, Sendai, Miyagi 9808579, Japan

[6] Iwate Univ, Morioka, Iwate 0208551, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 12期

关键词：

D O I：

10.1063/1.2715100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Schottky ultraviolet photodiode using a (0001) ZnO single crystal grown by the hydrothermal growth method is reported. The photodiode consisted of a semitransparent Pt film for the Schottky electrode and an Al thin film for the Ohmic electrode. The photodiode had polarity dependences on current-voltage characteristics and on responsivity. In the case of the Schottky electrode on the zinc surface, the responsivity was 0.185 A/W at a wavelength of 365 nm. On the other hand, the responsivity was 0.09 A/W for an oxygen surface. The results are attributed to the polarity dependences of surface chemical reactivity and the surface state density on ZnO surfaces. (c) 2007 American Institute of Physics.

引用

页数：3

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