Schottky ultraviolet photodiode using a ZnO hydrothermally grown single crystal substrate

被引：106
|
作者：
Endo, Haruyuki [1 ]
Sugibuchi, Mayo
Takahashi, Kousuke
Goto, Shunsuke
Sugimura, Shigeaki
Hane, Kazuhiro
Kashiwaba, Yasube
机构：
[1] Iwate Ind Res Inst, Morioka, Iwate 0200852, Japan
[2] Iwate Informat Syst Corp, Morioka, Iwate 0200045, Japan
[3] Lightom Inc, Morioka, Iwate 0200173, Japan
[4] Tokyo Denpa Co Ltd, Tokyo 1430024, Japan
[5] Tohoku Univ, Sendai, Miyagi 9808579, Japan
[6] Iwate Univ, Morioka, Iwate 0208551, Japan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 12期
关键词：
D O I：
10.1063/1.2715100
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A Schottky ultraviolet photodiode using a (0001) ZnO single crystal grown by the hydrothermal growth method is reported. The photodiode consisted of a semitransparent Pt film for the Schottky electrode and an Al thin film for the Ohmic electrode. The photodiode had polarity dependences on current-voltage characteristics and on responsivity. In the case of the Schottky electrode on the zinc surface, the responsivity was 0.185 A/W at a wavelength of 365 nm. On the other hand, the responsivity was 0.09 A/W for an oxygen surface. The results are attributed to the polarity dependences of surface chemical reactivity and the surface state density on ZnO surfaces. (c) 2007 American Institute of Physics.
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页数：3
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