Silicon-on-Insulator based Micromachining Technology for Sub-Terahertz Waveguide Devices

被引:3
|
作者
Zhao, Xinghai [1 ]
Glubokov, Oleksandr [1 ]
Oberhammer, Joachim [1 ]
机构
[1] KTH Royal Inst Technol, Div Micro & Nanasyst, Stockholm, Sweden
基金
欧洲研究理事会;
关键词
Silicon-on-Insulator; Sub-Terahertz; Silicon micromachining; DRIE; surface roughness; sidewall angle; metallization; alignment; bonding;
D O I
10.1109/APMC47863.2020.9331533
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The microfabrication technology based on Silicon-on-Insulator (SOI) for waveguide devices at sub-terahertz frequencies is investigated in this work. The relationship between the critical micromachining parameters and the performance of waveguide devices is discussed for achieving a better understanding of the SOI-based waveguide micromachining processes. Some typical sub-THz waveguide structures are demonstrated to verify the analysis to the proposed micromachining processes accordingly. SOI-based micromachining technology is one of the most promising methods to realize sub-THz components and their integration.
引用
收藏
页码:920 / 922
页数:3
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