Broadband Mid-Infrared Silicon-on-Insulator Waveguide Devices

被引：0

作者：

Dong, Bowei ^{[1
,2
,3
]}

Lee, Chengkuo ^{[1
,3
]}

Wang, Hong ^{[4
]}

Luo, Xianshu ^{[2
]}

Lo, Patrick Guo-Qiang ^{[2
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117583, Singapore

[2] ASTAR, Inst Microelect, Singapore 138634, Singapore

[3] NUS, Grad Sch Integrat Sci & Engn, Singapore 117456, Singapore

[4] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

2017 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN) | 2017年

关键词：

waveguide devices; mid infrared; broadband; photonics integrated circuits;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate SOI waveguide with low propagation and bending loss of 2dB/cm and 0.02dB/90 degrees in the broad mid-infrared range of 3.68-3.88 mu m. By theoretically analyzing loss mechanisms, we indicate SOI waveguide's intrinsic limitation for mid-infrared application.

引用

页码：15 / 16

页数：2

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