Deep states in SiO2/p-type 4H-SiC interface

被引：0

作者：

Yano, H ^{[1
]}

Inoue, N ^{[1
]}

Kimoto, T ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 60601, Japan

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

deep interface states; fixed charges; thermal oxidation; MOS; high-frequency C-V characteristics; light illumination effects;

D O I：

10.4028/www.scientific.net/MSF.264-268.841

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermally grown SiO2/p-type 4H-SiC interfaces were characterized by high-frequency C-V measurements using all illumination technique. The flatband shift of 8.0V was separated to the voltage shift of 7.8V caused by holes trapped at deep states and that of 0.2V caused by net positive fixed charges, indicating that the large flatband shift is caused mainly by heres trapped at the deep states, and not by the fixed charges. Using a monochromatic light, the energy distribution of the deep state density could be estimated.

引用

页码：841 / 844

页数：4

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