Deep states in SiO2/p-type 4H-SiC interface

被引：0

作者：

Yano, H ^{[1
]}

Inoue, N ^{[1
]}

Kimoto, T ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 60601, Japan

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

deep interface states; fixed charges; thermal oxidation; MOS; high-frequency C-V characteristics; light illumination effects;

D O I：

10.4028/www.scientific.net/MSF.264-268.841

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermally grown SiO2/p-type 4H-SiC interfaces were characterized by high-frequency C-V measurements using all illumination technique. The flatband shift of 8.0V was separated to the voltage shift of 7.8V caused by holes trapped at deep states and that of 0.2V caused by net positive fixed charges, indicating that the large flatband shift is caused mainly by heres trapped at the deep states, and not by the fixed charges. Using a monochromatic light, the energy distribution of the deep state density could be estimated.

引用

页码：841 / 844

页数：4

共 50 条

[1] Deep states in SiO2/p-type 4H-SiC interface
Kyoto Univ, Kyoto, Japan
Materials Science Forum, 1998, 264-268 (pt 2): : 841 - 844
[2] Deep interface states in SiO2/p-type α-SiC structure
Inoue, Naoya
Kimoto, Tsunenobu
Yano, Hiroshi
Matsunami, Hiroyuki
Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (11 A):
[3] SiO2/SiC interface of p-type 4H-SiC oxidized in mixed oxygen and nitrogen atmospheres
Zhao, Siqi
Li, Yunkai
Wei, Moyu
Jiao, Jingyi
Yan, Guoguo
Fu, Zhen
Zhang, Quan
Xiao, Chao
Yin, Qiang
Liu, Xingfang
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2025, 317
[4] Improving SiO2 grown on p-type 4H-SiC by NO annealing
Li, HF
Dimitrijev, S
Harrison, HB
Sweatman, D
Tanner, PT
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 869 - 872
[5] Characterization of anodic SiO2 films on P-type 4H-SiC
Woon, W. S.
Hutagalung, S. D.
Cheong, K. Y.
THIN SOLID FILMS, 2009, 517 (08) : 2808 - 2812
[6] Deep interface states in SiO2/p-type alpha-SiC structure
Inoue, N
Kimoto, T
Yano, H
Matsunami, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11A): : L1430 - L1432
[7] Electrical characteristics of NO nitrided SiO2 grown on p-type 4H-SiC
Li, HF
Dimitrijev, S
Harrison, HB
Sweatman, D
Tanner, P
1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2, 1997, : 611 - 612
[8] Spectroscopic Observation of the Interface States at the SiO2/4H-SiC(0001) Interface
Yamashita, Yoshiyuki
Nagata, Takahiro
Chikyow, Toyohiro
Hasunuma, Ryu
Yamabe, Kikuo
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2019, 17 : 56 - 60
[9] Improved reliability of NO-nitrided SiO2 grown on p-type 4H-SiC
Li, HF
Dimitrijev, S
Harrison, HB
IEEE ELECTRON DEVICE LETTERS, 1998, 19 (08) : 279 - 281
[10] Direct Observation of Energy Distribution of Interface States at SiO2/4H-SiC Interface
Yamashita, Y.
Hasunuma, R.
Nagata, T.
Chikyow, T.
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 6, 2016, 75 (12): : 207 - 211

← 1 2 3 4 5 →