Deposition of TiC films by dual source dc magnetron sputtering

被引：33
|
作者：
Inoue, S [1 ]
Wada, Y [1 ]
Koterazawa, K [1 ]
机构：
[1] Himeji Inst Technol, Fac Engn, Dept Mech & Intelligent Engn, Himeji, Hyogo 6712201, Japan
来源：
VACUUM | 2000年 / 59卷 / 2-3期
关键词：
sputtering; carbides; structure; composition; stress;
D O I：
10.1016/S0042-207X(00)00341-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ti-C films have been deposited onto slide glasses using a sputtering apparatus having dual planar magnetron cathodes. Applied de power for both Ti and graphite target was varied independently between 0-200 W for depositing Ti-C films with various C/Ti ratios. The substrates were not intentionally heated during deposition. The structure, composition and morphology of films were examined by XRD, AES and AFM. Carbon composition in the deposited Ti-C films increased with the power ratio of C/Ti as expected. However, the carbon concentration tends to be higher than designed from both deposition rates. This phenomenon is remarkable at lower C/Ti power ratio. The sticking coefficient of carbon atoms seemed to increase when Ti is cosputtered. The interplanar spacing of (0 0 2) Ti changed from 0.235 nm to 0.245 nm when C/Ti power ratio increased up to 0.2. It was found that crystalline TIC films are grown when C/Ti power ratio is between 0.4 and 4. The films deposited at 2 of C/Ti power ratio showed near-stoichiometric composition. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：735 / 741
页数：7
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