Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms

被引：29
|
作者：
Owen, JHG [1 ]
Miki, K [1 ]
Bowler, DR [1 ]
Goringe, CM [1 ]
Goldfarb, I [1 ]
Briggs, GAD [1 ]
机构：
[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
来源：
SURFACE SCIENCE | 1997年 / 394卷 / 1-3期
基金：
英国工程与自然科学研究理事会;
关键词：
chemical vapour deposition; density functional calculations; models of surface chemical reactions; scanning tunneling microscopy; silane; silicon; single crystal epitaxy; surface structure;
D O I：
10.1016/S0039-6028(97)00592-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The initial stages of gas-source growth of Si(001) using disilane have been investigated using a combination of elevated-temperature STM and atomistic modelling. The reaction pathway from the initial adsorption of disilane fragments up to the nucleation of short strings of epitaxial dimers is discussed. By the use of our STM to study disilane at the temperatures of interest, and atomistic modelling to calculate structural stability and significant activation barriers, we are able to propose a complete description of the mechanisms which underlie gas-source growth. (C) 1997 Elsevier Science B.V.
引用
收藏
页码：79 / 90
页数：12
相关论文
共 50 条
  • [31] Dynamic changes in reflectance anisotropy from the Si(001) surface during gas-source molecular-beam epitaxy
    Zhang, J
    Taylor, AG
    Lees, AK
    Fernandez, JM
    Joyce, BA
    Raisbeck, D
    Shukla, N
    Pemble, ME
    PHYSICAL REVIEW B, 1996, 53 (15): : 10107 - 10115
  • [32] Ti-island-catalyzed Si nanowire growth by gas-source MBE: Morphology and twinning
    Tang, Q
    Liu, X
    Kamins, TI
    Solomon, GS
    Harris, JS
    FUNCTIONAL NANOSTRUCTURED MATERIALS THROUGH MULTISCALE ASSEMBLY AND NOVEL PATTERNING TECHNIQUES, 2002, 728 : 235 - 240
  • [33] RHEED STUDIES OF THE GROWTH OF SI(001) BY GAS SOURCE MBE FROM DISILANE
    MOKLER, SM
    LIU, WK
    OHTANI, N
    JOYCE, BA
    JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) : 290 - 295
  • [34] Morphological transitions of Si1-xGex films growing on Si(100).: I.: Gas-source molecular-beam epitaxy:: From two-dimensional growth to growth in the Stranski-Krastanov mode
    Akazawa, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2002, 20 (01): : 53 - 59
  • [35] Dynamic changes in reflectance anisotropy from the Si(001) surface during gas-source molecular-beam epitaxy
    Zhang, J.
    Taylor, A. G.
    Lees, A. K.
    Fernandez, J. M.
    Physical Review B: Condensed Matter, 53 (15):
  • [36] Kinetics of Si1-xGex(001) growth on Si(001)2×1 by gas-source molecular-beam epitaxy from Si2H6 and Ge2H6
    J Appl Phys, 11 (6372):
  • [37] Gas-source MBE growth of Tl-based III-V semiconductors and their Raman scattering characterization
    Zhou, YK
    Asahi, H
    Ayabe, A
    Takenaka, K
    Fushida, M
    Asami, K
    Gonda, S
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) : 547 - 551
  • [38] GROWTH AND CHARACTERIZATION OF SI/SIGE MICROSTRUCTURES ON PATTERNED SI SUBSTRATES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY
    ZHANG, J
    ZHANG, XM
    MATSUMURA, A
    MARINOPOULOU, A
    HARTUNG, J
    ANWAR, N
    PARRY, G
    XIE, MH
    MOKLER, SM
    FERNANDEZ, JM
    JOYCE, BA
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 950 - 954
  • [39] GROWTH OF SI1-XGEX HETEROSTRUCTURES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY
    OHTANI, N
    MOKLER, SM
    XIE, MH
    ZHANG, J
    ZHANG, X
    JOYCE, BA
    INTERNATIONAL JOURNAL OF OPTOELECTRONICS, 1994, 9 (02): : 193 - 203
  • [40] Si(011)16x2 gas-source molecular beam epitaxy: Growth kinetics
    Taylor, N
    Kim, H
    Desjardins, P
    Foo, YL
    Greene, JE
    APPLIED PHYSICS LETTERS, 2000, 76 (20) : 2853 - 2855
12345