Design of Two-Stage MOSFET-Only Operational Amplifiers

被引:1
|
作者
Aminzadeh, Hamed [1 ]
Danaie, Mohammad [1 ]
机构
[1] Ferdowsi Univ Mashhad, Integrated Syst Lab, EE Dept, Mashhad, Iran
关键词
D O I
10.1109/ICM.2008.5393841
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, the gate-to-bulk capacitance property of MOS transistors is employed to design high-speed two-stage operational amplifiers (opamp). Traditional design of two-stage opamps recommends MIM or PIP capacitors to avoid instability in closed-loop applications. In addition to area efficiency achieved by replacing these capacitors with MOS transistors, the integration of the opamp would become compatible with standard digital CMOS technologies. Circuit-level simulation compares two opamps that are designed to be employed in a 50MS/s switched-capacitor sample-and-hold circuit. For the same specifications in 0.18 mu m CMOS technology, the proposed MOSFET-only opamp is about 52% smaller than a conventionally design when neglecting the signal path capacitors.
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页码:35 / 38
页数:4
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