Hall effect in a magnetic field parallel to interfaces of a III-V semiconductor quantum well

被引:5
|
作者
Mal'shukov, AG [1 ]
Chao, KA
Willander, M
机构
[1] Russian Acad Sci, Inst Spect, Troitsk 142092, Moscow Oblast, Russia
[2] Univ Lund, Dept Theoret Phys, S-22362 Lund, Sweden
[3] Chalmers Univ Technol, Dept Phys, S-41296 Gothenburg, Sweden
来源
PHYSICAL REVIEW B | 1998年 / 57卷 / 04期
关键词
D O I
10.1103/PhysRevB.57.R2069
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have discovered that the spin-orbit coupling of electrons confined in a III-V semiconductor quantum well gives rise to an anomalous Hall current when both magnetic field and electric field are applied parallel to interfaces of the well. This Hall current is always perpendicular to the electric field, and depends strongly on the orientations of the electric and magnetic fields with respect to crystal axes. The Hall current is larger in samples with lower electron mobility. Our theory predicts that this effect can be observed in asymmetric quantum wells grown along the [011] direction, but not in [001]- and [111]-oriented quantum wells.
引用
收藏
页码:R2069 / R2072
页数:4
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