Anomalous Hall effect of heavy holes in III-V semiconductor quantum wells

被引：5
|
作者：
Institute of Applied Physics and Computational Mathematics, P.O. Box 8009, Beijing 100088, China [1 ]
机构：
来源：
Chin. Phys. | 2007年 / 2卷 / 517-523期
关键词：
Semiconductor quantum wells;
D O I：
10.1088/1009-1963/16/2/038
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学科分类号：
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