Control of wavelength and decay time of photoluminescence for InAs quantum dots grown on InP(311)B using the digital embedding method

被引：0

作者：

Akahane, Kouichi ^{[1
]}

Yamamoto, Naokatsu ^{[1
]}

Umezawa, Toshimasa ^{[1
]}

Kawanishi, Tetsuya ^{[1
]}

Tanaka, Takehiro ^{[2
]}

Nakamura, Shin-Ichi ^{[2
]}

Sotobayashi, Hideyuki ^{[2
]}

机构：

[1] Natl Inst Informat & Commun Technol, 4-2-1 Nukui Kitamachi, Koganei, Tokyo 1848795, Japan

[2] Aoyama Gakuin Univ, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 2298558, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2016年 / 253卷 / 04期

关键词：

InAs; InP; molecular beam epitaxy; photoluminescence; quantum dots; superlattices; FABRICATION; LASER;

D O I：

10.1002/pssb.201552483

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A lattice-matched InGaAs and InAlAs superlattice (SL) was used to embed InAs quantum dots (QDs) on an InP(311)B substrate; this is called the digital embedding method (DEM). We controlled the emission wavelength of the InAs QDs by changing the period of the SL or the ratio of the thickness of InGaAs to that of InAlAs. In addition, we investigated the time-resolved photoluminescence (PL) of the InAs QDs using the DEM. The decay time of the PL from the QDs was estimated by fitting a single exponential curve and was 380ps in the DEM sample and 700ps in the reference sample with a conventional InGaAlAs barrier. The decay time was clearly altered by changing the embedding structure. Therefore, carrier dynamics could be controlled using the DEM.

引用

页码：640 / 643

页数：4

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