Growth and characterization of 200 mm SI GaAs crystals grown by the VGF method

被引：15

作者：

Stenzenberger, J ^{[1
]}

Bünger, T ^{[1
]}

Börner, F ^{[1
]}

Eichler, S ^{[1
]}

Flade, T ^{[1
]}

Hammer, R ^{[1
]}

Jurisch, M ^{[1
]}

Kretzer, U ^{[1
]}

Teichert, S ^{[1
]}

Weinert, B ^{[1
]}

机构：

[1] Freiberger Compound Mat GMBH, D-09599 Freiberg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 250卷 / 1-2期

关键词：

substrates; gradient freeze tecbnique; semi-insulating gallium arsenide;

D O I：

10.1016/S0022-0248(02)02214-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

It has been demonstrated that 200 mm diameter semi-insulating (SI) GaAs single crystals can be grown by an upscaled proprietary VGF method successfully used for commercial crystal growth up to 150 mm in the past. First results of structural and electrical characterization of wafers made from these crystals will be presented. They are similar to those known for state-of-the-art 150 mm SI GaAs VGF/VB crystals. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：57 / 61

页数：5

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