Photoelectric and spectral properties of ZnO thin films

被引:0
|
作者
Agramalyan, N. R.
Hovsepyan, R. K.
Poghosyan, A. R.
Von Roedern, B.
Vardanyan, E. S.
机构
[1] Inst Phys Res, Ashtarak 378410, Armenia
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源
关键词
zinc oxide; thin films; transparent conductive oxide; photoconductivity;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An optimization of transparent conductive coatings to increase efficiency is very important for solar cell applications. The developed technique has allowed to obtain both transparent high conductive and dielectric ZnO films doped by different impurities. Measurements of dark and photoconductivity were carried out in a wide frequency range. Photoelectric property studies have shown that with Li doping it is possible to achieve a significant increase of the photoconductivity. The current-voltage characteristics, current-optical power sensitivity and kinetics of rise and decay times of slow and fast components of the photoresponse were studied. It was found that the dark current and photocurrent in Li doped ZnO films have different conductivity mechanisms: hopping mechanism or charge transfer in a Hubbard-model impurity band for dark conductivity current, and drift mechanism of charge transfer in the conduction band for photoconductivity current.
引用
收藏
页码:1418 / 1421
页数:4
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