Characterization of ionizing radiation effects in MOS structures by bipolar operation study

被引：0
|
作者：
Bakhtiar, H [1 ]
Picard, C [1 ]
Brisset, C [1 ]
Hoffmann, A [1 ]
Mialhe, P [1 ]
Charles, JP [1 ]
机构：
[1] Univ Teknol Malaysia, Dept Phys, Johor 80990, Malaysia
来源：
FIFTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS | 1999年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work presents a method to characterize transistors of submicronic dimensions. The study of the substrate-drain junction of transistors before and after irradiation shows that irradiation induces junction electrical parameters changes clue to surface potential action on space-charge region Variations of the current gain of the bipolar transistor (drain-substrate-source as emitter-base-collector) for different gate voltages are analyzed and compared to dose effects on the oxide.
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页码：548 / 553
页数：6
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