A one-dimensional viscoelastic model for lateral relaxation in thin films

被引：5

作者：

Mokni, N ^{[1
]}

Sidoroff, F ^{[1
]}

Danescu, A ^{[1
]}

机构：

[1] Ecole Cent Lyon, UMR CNRS 5513, LTDS, F-69131 Ecully, France

来源：

COMPUTATIONAL MATERIALS SCIENCE | 2003年 / 26卷

关键词：

thin films; epitaxy; stress relaxation; viscoelasticity;

D O I：

10.1016/S0927-0256(02)00392-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper is dedicated to a one-dimensional model intended to describe the lateral relaxation in thin film bonded on a wafer via a compliant (viscous) glass. We analyze the partition of energy between the film and the template substrate and we show that if relaxation takes place, it will be initiated at the lateral boundary of the interface (template substrate)/(viscous glass). We extend the one-dimensional model to take into account the growth rate and show that the lateral relaxation is favored by a slow growth rate. (C) 2002 Published by Elsevier Science B.V.

引用

页码：56 / 60

页数：5

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