Exploring a Fatigue-Free Layered Hybrid Perovskite Ferroelectric for Photovoltaic Non-Volatile Memories

被引:28
|
作者
Yao, Yunpeng [1 ,2 ,3 ,4 ]
Peng, Yu [1 ,2 ,3 ,4 ]
Li, Lina [1 ,2 ]
Zhang, Xinyuan [1 ,2 ,4 ]
Liu, Xitao [1 ,2 ]
Hong, Maochun [1 ,2 ]
Luo, Junhua [1 ,2 ]
机构
[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
[2] Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Fujian, Peoples R China
[3] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
[4] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
bulk photovoltaic effect; fatigue-free; ferroelectric; hybrid perovskite; non-volatile memories; TITANATE; FILMS;
D O I
10.1002/anie.202012601
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Through a functional unit-transmutation strategy, a fatigue-free layered hybrid perovskite ferroelectric (C6H5CH2NH3)(2)CsPb2Br7 (BCPB) has been developed, which demonstrates stable spontaneous polarization (P-s) of 6.5 mu C cm(-2) and high Curie temperature up to 425 K. Meanwhile, BCPB shows splendid bulk photovoltaic effect (BPVE) properties with noticeable zero-bias photocurrent density (5 mu A cm(-2)), and high on/off switching ratio of current (over 3x10(5)); these merits even overmatch the most known ferroelectric semiconductor BiFeO3. The unique structure with self-regulated net electrical charged layers gives rise to the fatigue-free feature of P-s and BPVE (no significant fatigue after 10(8) polarity switching cycles), promoting the potential applications of BCPB in photovoltaic non-volatile memories. This work offers an efficient approach for exploring fatigue-free semiconducting ferroelectrics as well as excavates their further applications in next-generation electronic devices.
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页码:10598 / 10602
页数:5
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