CMOS symmetric trace differential stacked spiral inductor

被引：4
|
作者：
Kim, J. [1 ]
Kim, H. [1 ]
机构：
[1] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
来源：
ELECTRONICS LETTERS | 2010年 / 46卷 / 14期
关键词：
D O I：
10.1049/el.2010.1234
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A miniature silicon-based symmetric trace differential stacked spiral inductor (SDSSI) has been implemented using standard 0.18 mu m CMOS technology. Based on the measured two-port S-parameter using a standard de-embedding procedure, the self-resonance frequency (f(sr)) and quality factor (Q) of the SDSSI were compared to a conventional differential stacked spiral inductor (DSSI). The f(sr) of the SDSSI was nearly 2.5 times higher than that of the DSSI, and the Q value of the SDSSI was also enhanced.
引用
收藏
页码：1005 / U70
页数：2
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