Effect of the silicon surface step on the acetylene reaction with the Si(111)7x7 reconstructed surface

被引：0
|
作者：
Scarselli, M
Castrucci, P
Piancastelli, MN
De Crescenzi, M
机构：
[1] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
[2] Univ Roma Tor Vergata, Unita INFM, I-00133 Rome, Italy
[3] Univ Camerino, Dipartimento Fis, I-62032 Camerino, Italy
[4] Univ Camerino, Unita INFM, I-62032 Camerino, Italy
[5] Univ Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, I-00133 Rome, Italy
[6] Univ Roma Tor Vergata, Unita INFM, I-00133 Rome, Italy
来源：
SURFACE SCIENCE | 2004年 / 566卷
关键词：
scanning tunneling microscopy; silicon carbide; step formation and bunching; surface structure; morphology; roughness; and topography; alkynes;
D O I：
10.1016/j.susc.2004.06.065
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this paper we report on a morphological investigation of the growth mechanism of silicon carbide (SiC) on the Si(111)7 x 7 surface. The role of the substrate morphology and temperature during acetylene exposure has been studied with the aim to obtain high quality SiC films. We compared two starting points of silicon substrate: one characterised by step bunching and one by monoatomic terraces of the same width. Our results indicate that a lower density of defects and holes is present in the former case. (C) 2004 Elsevier B.V. All rights reserved.
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收藏
页码：155 / 159
页数：5
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