A New Spectral Approach to Modeling Charge Trapping/Detrapping in NAND Flash Memories

被引：0
|
作者：
Paolucci, Giovanni M. [1 ]
Compagnoni, Christian Monzio [1 ]
Miccoli, Carmine
Bertuccio, Massimo [2 ]
Beltrami, Silvia
Barber, John [2 ]
Kessenich, Jeffrey
Lacaita, Andrea L. [1 ]
Spinelli, Alessandro S. [1 ]
Visconti, Angelo
机构：
[1] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, Piazza L da Vinci 32, I-20133 Milan, Italy
[2] Politecnico Milano, Dipartimento Elettron, Informazione Bioingegneria, Boise, ID USA
来源：
2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2014年
关键词：
Flash memories; program/erase cycling; semiconductor device reliability; semiconductor device modeling; DATA RETENTION CHARACTERISTICS; RANDOM TELEGRAPH NOISE; INSTABILITIES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a semi-analytical model for the description of charge trapping and detrapping phenomena occurring during cycling and idle periods in NAND Flash memories. The model is based on a statistical distribution of detrapping time constants that is affected by the composition of cycles and idle periods and accounts for charge discreteness, statistical charge capture and emission and statistical distribution of the thresholdvoltage shift due to single detrapping events. The model can reproduce the experimental data under different conditions and allows to develop and monitor accelerated schemes able to mimic realistic on-field usage of the memory device.
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页数：6
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