High-Q germanium optical nanocavity

被引:21
|
作者
Xiao, Ting-Hui [1 ]
Zhao, Ziqiang [2 ]
Zhou, Wen [3 ]
Takenaka, Mitsuru [2 ]
Tsang, Hon Ki [3 ]
Cheng, Zhenzhou [1 ]
Goda, Keisuke [1 ,4 ]
机构
[1] Univ Tokyo, Dept Chem, Tokyo 1130033, Japan
[2] Univ Tokyo, Dept Elect Engn & Informat Syst, Tokyo 1130033, Japan
[3] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China
[4] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
基金
日本学术振兴会;
关键词
WAVE-GUIDES; SILICON; PLATFORM; SI;
D O I
10.1364/PRJ.6.000925
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Mid-infrared (MIR) integrated photonics has attracted broad interest due to its promising applications in biochemical sensing, environmental monitoring, disease diagnosis, and optical communication. Among MIR integration platforms, germanium-based platforms hold many excellent properties, such as wide transparency windows, high refractive indices, and high nonlinear coefficients; however, the development of MIR germanium photonic devices is still in its infancy. Specifically, MIR high-Q germanium resonators with comparable performance to their silicon counterparts remain unprecedented. Here we experimentally demonstrate an MIR germanium nanocavity with a Q factor of similar to 18,000, the highest-to-date of reported nanocavities across MIR germanium-based integration platforms. This is achieved through a combination of a feasible theoretical design, Smart-Cut methods for wafer development, and optimized device fabrication processes. Our nanocavity, with its high Q factor and ultrasmall mode volume, opens new avenues for on-chip applications in the MIR spectral range. (C) 2018 Chinese Laser Press
引用
收藏
页码:925 / 928
页数:4
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