Absolute cross section for Si2+(3s3p 3Po→3s3p 1Po) electron-impact excitation -: art. no. 052702

被引:4
|
作者
Janzen, PH [1 ]
Gardner, LD [1 ]
Reisenfeld, DB [1 ]
Kohl, JL [1 ]
机构
[1] Harvard Smithsonian Ctr Astrophys, Cambridge, MA 02138 USA
来源
PHYSICAL REVIEW A | 2003年 / 67卷 / 05期
关键词
D O I
10.1103/PhysRevA.67.052702
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We have measured the absolute energy-averaged cross section for electron-impact excitation of Si2+(3s3p P-3(o)-->3s3p P-1(o)) from energies below threshold to the turn-on of the 3s3p P-3(o)-->3p(2) P-3 transition. A beams modulation technique with inclined electron and ion beams was used. Radiation at 120.65 nm from the decay of the excited ions to the 3s(2) S-1 ground state was detected using an absolutely calibrated optical system. The fractional population of metastable Si2+(3s3p P-3(o)) in the incident ion beam was determined to be 0.256+/-0.035(1.65sigma). The experimental energy spread ranged from 0.85 eV (full width at half maximum) at the lowest energies to 0.56 eV at the highest. Resonance features consistent with 12-state close-coupling R-matrix calculations are seen.
引用
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页数:7
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