Development of metamorphic InP/InGaAs double heterojunction bipolar transistors (HBTs) on GaAs substrate for microwave applications

被引：0
|
作者：
Wang, H [1 ]
Radhaknishnan, K [1 ]
Li, XP [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore
来源：
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
关键词：
metamorphic; indium phosphide; heterojunction bipolar transistor;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The device performance of InP/InGaAs double HBTs including DC and microwave characteristics of have been carefully investigated. The MHTs exhibit high current gain and common-emitter breakdown voltage with low junction leakages. An f(T) and an f(max) higher than 90 GHz were obtained for the devices with 1.6x5 mu m(2) emitter area. Both microwave noise and power performances for the MHBT's are comparable to the conventional InP HBTs. More important, the issues which could be important for practical device application such as device thermal resistance, 1/f noise and device stability under high temperature and high current stress were carefully investigated. The results suggest a great potential of MHBTs for microwave applications.
引用
收藏
页码：2273 / 2276
页数：4
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