Etch of gallium nitride and other III-V materials using a novel high-density plasma configuration

被引：0
|
作者：
Kuo, TN [1 ]
Yeh, JH [1 ]
Lee, HJ [1 ]
Chen, CA [1 ]
Jeng, GK [1 ]
Lin, CP [1 ]
机构：
[1] Nano Architect Res Corp, Hsinchu, Taiwan
来源：
OPTOELECTRONIC MATERIALS AND DEVICES II | 2000年 / 4078卷
关键词：
high density plasma(HDP); inductively coupled plasma(ICP); dry etch; deep-etch; GaN/GaInN; AlGaInP/GaInP; III-V semiconductor; HBT; VCSEL; LED/LD;
D O I：
10.1117/12.392123
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Implementation of a novel high-density plasma configuration has led to high etch rates of various opto-electronic device structures. The etch rate for multiple quantum well GaN/GaInN structures exceeds 7500 Angstrom/min, and that for AlGaInP/GaInP structure is over 4.5 micron/min with near-vertical profile. Discussion will cover the analysis of the etch-rate, micromorphology, etch-profile and selectivity with respect to the influence by various process parameters. Deep-etch for over 20 microns with photoresist as the protection layer has been achieved, which resulted in nearly 90-degree profile.
引用
收藏
页码：74 / 81
页数：8
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