Etch of gallium nitride and other III-V materials using a novel high-density plasma configuration

被引：0

作者：

Kuo, TN ^{[1
]}

Yeh, JH ^{[1
]}

Lee, HJ ^{[1
]}

Chen, CA ^{[1
]}

Jeng, GK ^{[1
]}

Lin, CP ^{[1
]}

机构：

[1] Nano Architect Res Corp, Hsinchu, Taiwan

来源：

OPTOELECTRONIC MATERIALS AND DEVICES II | 2000年 / 4078卷

关键词：

high density plasma(HDP); inductively coupled plasma(ICP); dry etch; deep-etch; GaN/GaInN; AlGaInP/GaInP; III-V semiconductor; HBT; VCSEL; LED/LD;

D O I：

10.1117/12.392123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Implementation of a novel high-density plasma configuration has led to high etch rates of various opto-electronic device structures. The etch rate for multiple quantum well GaN/GaInN structures exceeds 7500 Angstrom/min, and that for AlGaInP/GaInP structure is over 4.5 micron/min with near-vertical profile. Discussion will cover the analysis of the etch-rate, micromorphology, etch-profile and selectivity with respect to the influence by various process parameters. Deep-etch for over 20 microns with photoresist as the protection layer has been achieved, which resulted in nearly 90-degree profile.

引用

页码：74 / 81

页数：8

共 40 条

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