A 271.8 nm deep-ultraviolet laser diode for room temperature operation

被引：263

作者：

Zhang, Ziyi ^{[1
,2
]}

Kushimoto, Maki ^{[3
]}

Sakai, Tadayoshi ^{[3
]}

Sugiyama, Naoharu ^{[2
]}

Schowalter, Leo J. ^{[2
,4
]}

Sasaoka, Chiaki ^{[2
]}

Amano, Hiroshi ^{[2
]}

机构：

[1] Asahi Kasei Corp, Innovat Devices R&D Ctr, Corp Res & Dev, Fuji, Shizuoka 4168501, Japan

[2] Nagoya Univ, Ctr Integrated Res Future Elect, Inst Mat Res & Syst Sustainabil, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648601, Japan

[3] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan

[4] Crystal IS, 70 Cohoes Ave, Green Isl, NY 12183 USA

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 12期

关键词：

laser diode; AlN; ultraviolet; LIGHT-EMITTING DIODE; WAVELENGTH; GROWTH;

D O I：

10.7567/1882-0786/ab50e0

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a deep-ultraviolet semiconductor laser diode that operates under current injection at room temperature and at a very short wavelength. The laser structure was grown on the (0001) face of a single-crystal aluminum nitride substrate. The measured lasing wavelength was 271.8;nm with a pulsed duration of 50;ns and a repetition frequency of 2;kHz. A polarization-induced doping cladding layer was employed to achieve hole conductivity and injection without intentional impurity doping. Even with this undoped layer, we were still able to achieve a low operation voltage of 13.8;V at a lasing threshold current of 0.4;A.

引用

页数：4

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