A 271.8 nm deep-ultraviolet laser diode for room temperature operation

被引：263
|
作者：
Zhang, Ziyi [1 ,2 ]
Kushimoto, Maki [3 ]
Sakai, Tadayoshi [3 ]
Sugiyama, Naoharu [2 ]
Schowalter, Leo J. [2 ,4 ]
Sasaoka, Chiaki [2 ]
Amano, Hiroshi [2 ]
机构：
[1] Asahi Kasei Corp, Innovat Devices R&D Ctr, Corp Res & Dev, Fuji, Shizuoka 4168501, Japan
[2] Nagoya Univ, Ctr Integrated Res Future Elect, Inst Mat Res & Syst Sustainabil, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648601, Japan
[3] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan
[4] Crystal IS, 70 Cohoes Ave, Green Isl, NY 12183 USA
来源：
APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 12期
关键词：
laser diode; AlN; ultraviolet; LIGHT-EMITTING DIODE; WAVELENGTH; GROWTH;
D O I：
10.7567/1882-0786/ab50e0
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a deep-ultraviolet semiconductor laser diode that operates under current injection at room temperature and at a very short wavelength. The laser structure was grown on the (0001) face of a single-crystal aluminum nitride substrate. The measured lasing wavelength was 271.8;nm with a pulsed duration of 50;ns and a repetition frequency of 2;kHz. A polarization-induced doping cladding layer was employed to achieve hole conductivity and injection without intentional impurity doping. Even with this undoped layer, we were still able to achieve a low operation voltage of 13.8;V at a lasing threshold current of 0.4;A.
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页数：4
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