Monolithic tunable active inductor with independent Q control

被引：0

作者：

Leifso, C ^{[1
]}

Haslett, JW

McRory, JG

机构：

[1] Univ Calgary, Dept Elect & Comp Engn, Calgary, AB T2N 1N4, Canada

[2] TRLabs Calgary, Calgary, AB T3K 3V5, Canada

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2000年 / 48卷 / 06期

关键词：

active inductor; GaAs; MESFET; MMIC; tunable;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1.1-GHz fully integrated GaAs MESFET active inductor is presented in this paper. Both the inductance and loss resistance are tunable with the inductance independent of series loss tuning. The measured loss resistance is tunable over a -10- to +15-Omega range with a corresponding change in inductance of less than 10% at 100 MHz and less than 4% for frequencies above 500 MHz, The inductance is tunable from 65 to 90 nH, Considerably larger bandwidths can be achieved depending on the fabrication technology employed and the intended application of the circuit.

引用

页码：1024 / 1029

页数：6

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