The study of laser plasma plume radiation produced by laser ablation of silicon

被引:0
|
作者
Huang, Qingju [1 ]
机构
[1] Guangdong Univ Petrochem Technol, Dept Phys, Maoming 525000, Peoples R China
关键词
pulsed laser; laser ablation; plasma plume; silicon;
D O I
10.1117/12.2068118
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In order to study the laser plasma plume radiation mechanisms induced by the interaction between Nd: YAG plused laser and silicon, the radiation model of silicon laser plasma plume is established. Laser plasma plume radiation includes atom characteristic lines, ion lines and continuous background. It can reflect the characteristics of laser plasma plume radiation, reveal the mechanism of laser ablation on silicon. Time-resolved measurment of laser plasma plume radiation produced by pulsed Nd: YAG laser ablation of silicon in different ambient gas is thoroughly studied. The experimental ambient gas are N-2 and O-2. The pulse width of Nd: YAG plused laser adopted in the experiment is 20ns, the pulse energy is 60mJ, the laser pulsing frequency is 10Hz, and the emitted laser wavelength is 1064nm, The silicon target purity is 99.99%, The target is rotating at a speed of 240r/min. The focusing area of the laser on the Si target has a diameter of around 0.8mm. The pressure of ambient gas is tunable between 13Pa and 101.3kPa in the induced chamber, the number of points used in averaging is 15. The experimental results show that the ambient gas has obvious enhancement effect on the radiation intensity of silicon laser plasma plume. With the increase of the ambient gas pressure, the silicon laser plasma plume radiation intensity will first be increased and then be decreased, and the ambient gas has an obvious compression effect on the scope of silicon laser plasma plume radiation. For the two different ambient gases, the maximum silicon laser plasma plume radiation intensity and maximum pressure for they are different, for oxygen at 35kPa, for nitrogen at 50kPa. The silicon laser plasma plume radiation intensity in oxygen is bigger than that in nitrogen. The main excition mechanisms of laser plasma plume radiation induced by Nd:YAG plused laser induced silicon is analyzed, The plused laser can makes part molecules in the ambient gas and silicon atoms ionized at the surface of silicon. The main reason for the generation of the silicon laser plasma plume radiation is the excitation radiation by the collision energy transfer between electrons and atoms or ions. The experimental phenomenon that could be explained by the excition model.
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页数:8
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