Effects of Al pad deformation and TiW barrier layer on copper-to-silicon diffusion and intermetallic compound formation in copper wire bonding

被引：0

作者：

Zhang, Shawn ^{[1
]}

Chen, Catherine ^{[1
]}

Lee, Ricky ^{[1
]}

Lau, Angie K. M. ^{[2
]}

Tsang, Paul P. H. ^{[2
]}

Mohamed, Lebbai ^{[2
]}

Chan, C. Y. ^{[2
]}

Dirkzwager, M. ^{[2
]}

机构：

[1] Hong Kong Univ Sci & Technol, Ctr Adv Microsyst Packaging, Elect Packaging Lab, Kowloon, Hong Kong, Peoples R China

[2] PSCCHK, Kwai Chung, Hong Kong, Peoples R China

来源：

IEEE CPMT: INTERNATIONAL SYMPOSIUM AND EXHIBITION ON ADVANCED PACKAGING MATERIALS: PROCESSES, PROPERTIES AND INTERFACES | 2006年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu wire bonding attracts great attention in recent years due to its many advantages over Au and Al wire bonding. However, Cu is a fast diffuser in Si compared with Au and Al and may impose more threats to Si devices. Therefore, Cu-toSi diffusion and its correlation with intermetallic compound (IMC) formation in wire bonding should be investigated. In this study, Cu-to-Si diffusion and IMC formation are studied in real diode devices. The effect of Al pad deformation to Cu diffusion is investigated with the aid of lab-made multilayer structure. The samples with and without titanium-tungsten (TiW) barrier layer is adopted to study the barrier layer effect. Secondary ion mass spectrometry depth profiling is carried out for diffusion characterization and cross sections of the wire bonded samples are made for IMC observation and measurement.

引用

页码：189 / +

页数：3

共 37 条

[31] Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system
Byrne, C.
Brennan, B.
Lundy, R.
Bogan, J.
Brady, A.
Gomeniuk, Y. Y.
Monaghan, S.
Hurley, P. K.
Hughes, G.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 63 : 227 - 236
[32] Degradation of plated silicon solar module due to copper diffusion: The role of capping layer formation and contact adhesion
Phua, Benjamin
Shen, Xiaowei
Hsiao, Pei-Chieh
Kong, Charlie
Stokes, Alex
Lennon, Alison
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 215
[33] Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias
Djomeni, Larissa
Mourier, Thierry
Minoret, Stephane
Fadloun, Sabrina
Piallat, Fabien
Burgess, Steve
Price, Andrew
Zhou, Yun
Jones, Christopher
Mathiot, Daniel
Maitrejean, Sylvain
MICROELECTRONIC ENGINEERING, 2014, 120 : 127 - 132
[34] The effectiveness of a thin refractory metal layer inserted into a Ta film by ion-assisted deposition as a diffusion barrier between copper and silicon
Kim, JH
Lee, SM
Kwak, JS
Baik, HK
Ryu, HJ
Je, JH
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S349 - S352
[35] Reliability improvement study of a build-up wire bonding EBGA package using eight-layer 0.13 um copper silicon technology
Yang, Liyu
King, Carl
Peng, Ryan
Gelvin, Eric
56TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE 2006, VOL 1 AND 2, PROCEEDINGS, 2006, : 1893 - +
[36] In Situ XPS Chemical Analysis of MnSiO3 Copper Diffusion Barrier Layer Formation and Simultaneous Fabrication of Metal Oxide Semiconductor Electrical Test MOS Structures
Byrne, Conor
Brennan, Barry
McCoy, Anthony P.
Bogan, Justin
Brady, Anita
Hughes, Greg
ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (04) : 2470 - 2477
[37] INTERMETALLIC COMPOUND LAYER FORMATION BETWEEN COPPER AND HOT-DIPPED 100IN, 50IN-50SN, 100SN, AND 63SN-37PB COATINGS
VIANCO, PT
HLAVA, PF
KILGO, AC
JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (07) : 583 - 594

← 1 2 3 4 →